发明名称 Dual-chamber plasma processing apparatus
摘要 A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.
申请公布号 US2006021701(A1) 申请公布日期 2006.02.02
申请号 US20040901825 申请日期 2004.07.29
申请人 ASM JAPAN K.K. 发明人 TOBE YASUHIRO;MORISADA YOSHINORI;IKEDA SHINGO;KAWANO BAIEI
分类号 C23F1/00 主分类号 C23F1/00
代理机构 代理人
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