| 摘要 |
Production of a DMOS transistor with a lateral drain extension involves the deposition on a gate substrate (53) presenting two essentially parallel lateral surfaces, then defining a drain spacer (51) and a source spacer (52) in an insulating material on the lateral surfaces of the gate, respectively drain side and source side of the transistor. The drain spacer has a width strictly greater than a width of the source spacer. An independent claim is also included for a DMOS transistor with a lateral drain extension obtained. |
