| 摘要 |
<p>A field emission display (FED) using carbon nanotube emitters and a method of manufacturing the same. A gate stack that surrounds the CNT emitter includes a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiO<SUB>X</SUB>, X<2), and a focus gate electrode formed on the mask layer. The height of the mask layer is greater than that of the CNT emitter. The focus gate insulating film has a thickness 2 mum or more, and preferably 3~15 mum. In a process of forming the focus gate insulating film and/or the gate insulating film, a flow rate of silane is maintained at 50~700 sccm and a flow rate of nitric acid (N<SUB>2</SUB>O) is maintained at 700~4,500 sccm.</p> |
