发明名称 |
CHARGE-TRAPPING MEMORY ARRAYS RESISTANT TO DAMAGE FROM CONTACT HOLE FORMATION |
摘要 |
<p>The present invention relates to a memory array (100) comprising a substrate (222) and a plurality of bitlines (224) having contacts (240) and a plurality of wordlines (201, 202) intersecting the bitlines (224). A protective spacer (234) is used to separate the bitline contacts (240) from the wordlines (201) adjacent to the bitline contacts (240) to prevent damage caused during the formation of the bitline contacts (240). The present invention also relates to a method of forming the memory array.</p> |
申请公布号 |
KR20060009819(A) |
申请公布日期 |
2006.02.01 |
申请号 |
KR20057016555 |
申请日期 |
2004.01.08 |
申请人 |
SPANSION LLC |
发明人 |
KAMAL TAZRIEN;RAMSBEY MARK T.;SHIRAIWA HIDEHIKO;CHEUNG FRED TK |
分类号 |
H01L27/115;H01L21/8246;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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