Substrate of gallium nitride single crystal and process for producing the same

摘要

A process for producing an epitaxial substrate having a semiconductor crystal of Group 3-5 compound with reduced dislocation density, the semiconductor crystal represented by the general formula InxGayAlzN (wherein x+y+z=1, 0 & x & 1, 0 & y & 1 and 0 & z & 1), characterized in that the process includes the first step of providing a semiconductor crystal of Group 3-5 compound having multiple projected configurations and covering the same with a mask constituted of a material different from the Group 3-5 compound so that openings are provided only in the vicinity of crystal tips and the second step of growing the semiconductor crystal of Group 3-5 compound in lateral direction with the use of the semiconductor crystal of Group 3-5 compound at the openings as seed crystal. Thus, an independent substrate of semiconductor crystal of nitrided Group 3-5 compound with low dislocation density and ensuring reduced warpage can be produced.