发明名称 |
System and method for performing partial array self-refresh operation in a semiconductor memory device |
摘要 |
Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, 1/8, or 1/16) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.
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申请公布号 |
US6992943(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20040959804 |
申请日期 |
2004.10.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG HYONG-RYOL;CHOI JONG-HYUN;JANG HYUN-SOON |
分类号 |
G11C7/00;G11C11/407;G11C7/10;G11C11/403;G11C11/406;G11C11/408 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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