发明名称 n-Type thiophene semiconductors
摘要 The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, alpha,omega-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ~0.01 cm<SUP>2 </SUP>Vs-some of the highest reported to date for n-type organic semiconductors.
申请公布号 US6991749(B2) 申请公布日期 2006.01.31
申请号 US20030610276 申请日期 2003.06.30
申请人 NORTHWESTERN UNIVERSITY 发明人 MARKS TOBIN J.;FACCHETTI ANTONIO
分类号 H01B1/12;C08G61/12;H01L27/32;H01L51/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01B1/12
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