发明名称 |
Methods for forming silicon dioxide layers on substrates using atomic layer deposition |
摘要 |
Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.
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申请公布号 |
US6992019(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20030459943 |
申请日期 |
2003.06.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JOO-WON;PARK JAE-EUN;YANG JONG-HO;CHU KANG-SOO |
分类号 |
H01L21/205;H01L21/302;C23C16/40;C23C16/44;C23C16/455;H01L21/312;H01L21/314;H01L21/316;H01L21/76 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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