发明名称 |
Magnetic memory device having a non-volatile magnetic section and manufacturing thereof |
摘要 |
A magnetic memory device, in which a tunnel magneto resistance element that establishes a connection between a write word line (first interconnection) and a bit line (second interconnection) is provided within a region in which the write word line and the bit line cross in a grade-separated manner. The magnetic memory device comprises a through hole that is provided in such a manner that is insulated from the write word line and also extending through the write word line so as to establish a connection between the tunnel magneto resistance element and a second landing pad (interconnection layer) lower than the write word line, and a contact that is formed in the through hole through a side wall barrier film so as to establish a connection between the tunnel magneto resistance element and the second landing pad.
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申请公布号 |
US6992342(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20030612842 |
申请日期 |
2003.07.02 |
申请人 |
SONY CORPORATION |
发明人 |
MOTOYOSHI MAKOTO;IKARASHI MINORU |
分类号 |
H01L27/105;H01L29/76;H01L21/8246;H01L27/115;H01L27/22;H01L31/0328;H01L43/08 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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