发明名称 |
Ferroelectric storage device |
摘要 |
In the present invention, a polarization having a lower polarization level than a saturation polarization is caused in a ferroelectric capacitor by applying a voltage that is lower than a saturation voltage to the ferroelectric capacitor. This allows a storage device to store many values by changing a length of a write-time during which the voltage is applied to the capacitor.
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申请公布号 |
US6992913(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20050041251 |
申请日期 |
2005.01.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA TAKAYOSHI;KATO YOSHIHISA |
分类号 |
G11C11/22;G11C11/56 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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