发明名称 |
Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell |
摘要 |
Various apparatuses and methods are shown in which an integrated circuit includes a dual-polarity non-volatile memory cell and a test circuit. The test circuit has a bias voltage generator and a first switch. The bias voltage generator couples to the dual-polarity non-volatile memory cell via the first switch.
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申请公布号 |
US6992938(B1) |
申请公布日期 |
2006.01.31 |
申请号 |
US20020313075 |
申请日期 |
2002.12.06 |
申请人 |
VIRAGE LOGIC CORPORATION |
发明人 |
SHUBAT ALEXANDER;RASZKA JAROSLAV |
分类号 |
G11C29/00;G11C7/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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