发明名称 Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell
摘要 Various apparatuses and methods are shown in which an integrated circuit includes a dual-polarity non-volatile memory cell and a test circuit. The test circuit has a bias voltage generator and a first switch. The bias voltage generator couples to the dual-polarity non-volatile memory cell via the first switch.
申请公布号 US6992938(B1) 申请公布日期 2006.01.31
申请号 US20020313075 申请日期 2002.12.06
申请人 VIRAGE LOGIC CORPORATION 发明人 SHUBAT ALEXANDER;RASZKA JAROSLAV
分类号 G11C29/00;G11C7/00 主分类号 G11C29/00
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