| 摘要 |
In the method, which is to be carried out on a computer system, firstly design data of a semiconductor substrate are read in and, on the basis thereof, a mask image is generated in the form of a data structure with contact holes and with auxiliary structures on the computer system. Afterwards, contact hole biases are determined by means of an optical proximity correction method and the relevant contact holes are corrected on the basis of these contact hole biases. By means of subsequent imaging simulation of the mask image on the semiconductor substrate, undesired imaging auxiliary structures and contact holes deviating from specified tolerances on the semiconductor substrate are detected and corrected. During the imaging simulation of the mask image, a mask bias is employed in order to compensate for three-dimensional mask effects. A real mask can be produced on the basis of the mask image thus determined.
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