发明名称 |
Semiconductor memory device, method for driving the same and portable electronic apparatus |
摘要 |
A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.
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申请公布号 |
US6992930(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20040836907 |
申请日期 |
2004.04.30 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MATSUOKA NOBUAKI;NAWAKI MASARU;MORIKAWA YOSHINAO;IWATA HIROSHI;SHIBATA AKIHIDE;HAMAGUCHI KOHJI |
分类号 |
G11C16/04;G11C11/34;H01L21/28;H01L21/8247;H01L27/108;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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主权项 |
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地址 |
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