发明名称 |
Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines |
摘要 |
This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
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申请公布号 |
US6992388(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20020068534 |
申请日期 |
2002.02.06 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
LI MING MICHAEL |
分类号 |
H01L23/48;H01L21/28;H01L21/285;H01L21/321;H01L21/336;H01L23/52;H01L29/40;H01L29/423;H01L29/49 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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