发明名称 |
Method for forming a field effect transistor having a high-k gate dielectric |
摘要 |
According to one exemplary embodiment, a method for forming a field effect transistor over a substrate comprises a step of forming an interfacial oxide layer over a channel region of the substrate, where the interfacial oxide layer has a first thickness. The interfacial oxide layer can prevent a high-k element from diffusing into the channel region. The method further comprises forming an oxygen-attracting layer over the interfacial oxide layer, where the oxygen-attracting layer prevents the first thickness of the interfacial oxide layer from increasing. The oxygen-attracting layer is formed by forming a metal layer over the interfacial oxide layer, where the metal layer combines with oxygen to form a silicate. The oxygen-attracting layer may be zirconium silicate or hafnium silicate, for example. The method further comprises forming a high-k dielectric layer over the oxygen-attracting layer. The method further comprises forming a gate electrode layer over the high-k dielectric layer.
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申请公布号 |
US6991990(B1) |
申请公布日期 |
2006.01.31 |
申请号 |
US20040899955 |
申请日期 |
2004.07.27 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JEON JOONG S;ZHONG HUICAI |
分类号 |
H01L21/8242;H01L21/28;H01L29/51;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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