摘要 |
The semiconductor storage device comprises memory cell transistors formed on a semiconductor substrate 10 ; first insulation films 42 covering the top surfaces and the side surfaces of gate electrodes 20 of the memory cell transistors; through-holes 40 opened on first diffused layers 24 ; a second insulation film 36 with through-holes 40 opened on first diffused layers 24 and through-holes 38 opened on second diffused layers 26 formed in; capacitors formed on the inside walls and the bottoms of the through-holes 40 and including capacitor storage electrodes 46 , connected to the first diffused layers 24 ; capacitor dielectric films 48 covering the capacitor storage electrodes 46 , and capacitor-opposed electrodes 54 covering at least a part of the capacitor dielectric films 48 ; and, contact conducting films 44 formed on the inside walls and bottoms of the through-holes 38 , and connected to the second diffused layers. This structure of the semiconductor storage device makes it unnecessary to secure an alignment allowance for alignment of the through-holes 40 opened on the first diffused layer 24 and the through-holes 38 opened on the second diffused layer 26 with the gate electrode 20 , which permits the semiconductor storage device to have a small memory cell area.
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