发明名称 |
Integrated semiconductor memory with a selection transistor formed at a ridge |
摘要 |
An integrated semiconductor memory is disclosed having selection transistors which can be formed at a respective ridge. The ridge can be arranged on an insulation layer. In the ridge the first source/drain region can be formed at one lateral end of the ridge and the second source/drain region can be formed at another lateral end of the ridge. The longitudinal sides of the ridge and a top side of the ridge can be covered with a layer stack including a gate dielectric and a gate electrode. High write-read currents can be achieved in the on state of the selection transistors and leakage currents occurring in the off state can be reduced.
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申请公布号 |
US6992345(B2) |
申请公布日期 |
2006.01.31 |
申请号 |
US20030727595 |
申请日期 |
2003.12.05 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
ENDERS GERHARD;SPITZER ANDREAS |
分类号 |
H01L27/108;G11C11/24;H01L21/8242;H01L27/105;H01L27/12 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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