| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A through hole tapered from an opening to the in-depth direction is formed in a semiconductor substrate provided with an integrated circuit. An insulating material is supplied to the through hole through the opening so as to form an insulating layer on the inner surface of the through hole. A conductive material is supplied through the opening to the through hole provided with the insulating layer so as to form a conductive portion inside the insulating layer. |
| 申请公布号 |
KR20060009407(A) |
申请公布日期 |
2006.01.31 |
| 申请号 |
KR20060006497 |
申请日期 |
2006.01.20 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
MIYAZAWA IKUYA;IKEHARA TADAYOSHI |
| 分类号 |
H01L21/60;H01L23/52;H01L21/268;H01L21/3205;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L23/485;H01L25/065;H01L25/07;H01L25/18;H01L31/0328 |
主分类号 |
H01L21/60 |
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