| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. |
| 申请公布号 |
SG118068(A1) |
申请公布日期 |
2006.01.27 |
| 申请号 |
SG20010001320 |
申请日期 |
2001.03.05 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SHUNPEI YAMAZAKI;JUN KOYAMA;HIDEOMI SUZAWA;KOJI ONO;TATSUYA ARAO |
| 分类号 |
H01L29/786;G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L27/13 |
主分类号 |
H01L29/786 |
| 代理机构 |
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