| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of CMOS image sensor which allows a leakage current due to a salicide film to be minimized and its yield to be enhanced. SOLUTION: This method comprises the steps of: preparing a semiconductor substrate having a pixel array region provided with a peripheral circuit section, a photo diode, and a readout circuit section; defining the semiconductor substrate as an active region and a field region, and forming a field oxide film in the field region; and forming a gate in the peripheral circuit section, and the readout circuit section in the pixel array region. Further, the method comprises the steps of: forming the photo diode in a photo diode region of the pixel array region; forming a source/drain junction in the semiconductor substrate of the active region in both sides of the gate; forming a salicide preventing film on the semiconductor substrate in the pixel array region; and forming the salicide film on surfaces of a gate electrode of the peripheral circuit section and the source/drain junction, by using the salicide preventing film as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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