| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection method, capable of obtaining the distribution or the trend of the electric resistance and electric capacity of the entire surface of a substrate in a short time in inspection of defect in a substrate, such as a semiconductor device or liquid crystal. SOLUTION: A substrate to be inspected 9 such as a semiconductor wafer etc. is irradiated with charged particle beams 19, generated secondary electrons or back scattered electrons are captured into a detector 20, signals in proportion to the number of taken-in electrons are caused to occur, and an inspection image is formed on the basis of the signals. The current value and the irradiation energy of the charged particle beams, the electric field on the surface of the substrate to be inspected, the emission efficiency of the secondary electrons and back scattered electrons, etc., all taken into consideration, the electrical resistance and the electrical capacity are determined so as to match with those of the inspection image. By utilizing the charge by the electron beam irradiation, a defect is detected by performing inspection, by acquiring a potential contrast image in a state in which the difference in the electrical resistance value between the normal part and the defective part is increased sufficiently. Thus, by estimating the electrical resistance or the electrical capacity, and providing measures against abnormality at an early stage in the substrate manufacturing process, the ratio of defective substrates can be reduced and productivity can be increased. COPYRIGHT: (C)2006,JPO&NCIPI
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