发明名称 LASER BEAM IRRADIATING METHOD AND EQUIPMENT THEREOF, NON-SINGLE CRYSTAL SEMICONDUCTOR FILM ANNEALING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a laser irradiation technology which prevents adverse effects due to returned light reflected from an irradiating body, when performing crystallization etc. using a lens array, keeps the stability of a laser oscillator high, and can carry out the uniform laser treatment, and to provide a crystallization method and a semiconductor device manufacturing method that uses the technology. SOLUTION: The laser light, emitted from the laser oscillator, passes through the lens array, such as cylindrical lens array and is divided into plurality, and the laser light after divided passes through an opening of a slit at a focus position, then, passes through a condenser lens, and is irradiated on an irradiation surface. Thus, the returned light, reflected from the irradiator, is cut off using the slit, and the variation in the output or the frequency of the laser and the breakage of a rod can be avoided; and as a result, the output of the laser light is stabilized; thereby, the irradiating surface can be irradiated with the laser light which is stable and has a uniform distribution of intensity, and the uniform annealing can be carried out. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006024916(A) 申请公布日期 2006.01.26
申请号 JP20050169737 申请日期 2005.06.09
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO
分类号 H01L21/268;H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/268
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