| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short circuit failure between adjacent interconnections having different potential by selectively reducing connecting holes which is not covered by an upper layer interconnection. SOLUTION: A method for manufacturing a semiconductor device comprises the steps of forming a first and second insulating films 18, 19 on a substrate; sequentially forming an organic sacrifice layer 30, and a first and second mask layers 31, 32 on it, and forming an interconnection groove pattern 33 on the second mask layer 32; forming a connecting hole pattern 34 for forming the connecting hole in the second and first mask layers 32, 31, and the organic sacrifice layer 30; forming the interconnection groove pattern 33 in the first mask layer 31 and the organic sacrifice layer 30 by etching with the use of the second and first mask layers 31, 32 for etching masks, and forming the connecting hole 35 in the second insulating film 19; and forming the interconnection groove 36 in the second insulating film 19 with the use of the first mask layer 31 and the organic sacrifice layer 30 for masks, and forming the connecting hole 35 to the second and first insulating films 19, 18. COPYRIGHT: (C)2006,JPO&NCIPI
|
