| 摘要 |
A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, an interlayer insulating film formed so that the gate electrode is buried therein, a contact hole formed in the interlayer insulating film so as to be adjacent to the gate electrode, the contact hole having a sidewall, a nitride film for the spacer formed on the sidewall of the contact hole and having a lower end, an insulating film interposed between the lower end of the spacer nitride film and a surface of the semiconductor substrate, and a conductor layer for the electrode formed so as to fill the contact hole.
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