发明名称 Semiconductor device having spacer pattern and method of forming the same
摘要 The present invention provides a semiconductor device having a spacer pattern and methods of forming the same that includes a lower interconnection pattern on a semiconductor substrate. A lower interconnection spacer covers sidewalls of the lower interconnection pattern. Spacer patterns cover the lower interconnection spacer of the lower interconnection pattern and disposed on the semiconductor substrate. An upper interconnection pattern is formed between the spacer patterns.
申请公布号 US2006017118(A1) 申请公布日期 2006.01.26
申请号 US20050184855 申请日期 2005.07.20
申请人 PARK JE-MIN;HWANG YOO-SANG 发明人 PARK JE-MIN;HWANG YOO-SANG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
主权项
地址