发明名称 |
Nitride-based transistors having laterally grown active region and methods of fabricating same |
摘要 |
High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
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申请公布号 |
US2006017064(A1) |
申请公布日期 |
2006.01.26 |
申请号 |
US20040899215 |
申请日期 |
2004.07.26 |
申请人 |
SAXLER ADAM W;SHEPPARD SCOTT;SMITH RICHARD P |
发明人 |
SAXLER ADAM W.;SHEPPARD SCOTT;SMITH RICHARD P. |
分类号 |
H01L29/739;H01L21/335;H01L29/20;H01L29/778 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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