SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A plurality of devices is fabricated in a semiconductor wafer (30), and insulating films (13, 14) are formed on the surface where the devices are fabricated. Conductive layers (15, 16) covering an opening where an electrode pad (12) of each device is exposed are formed. A resist layer (R2) having an opening where a terminal forming portion of the conductive layer is exposed is formed. Using this resist layer (R2) as a mask, a metal post (17) is formed on the terminal forming portion of the conductive layer (16). The back of the semiconductor wafer (30) is lapped and thinned to a predetermined thickness. The resist layer (R2) is removed, and an unnecessary portion (15) of the conductive layer is removed so as to expose the top of the metal post (17). Encapsulating with an encapsulating resin is performed. A metal bump is joined to the top of the metal post (17). The semiconductor wafer is divided into the discrete devices.