PHASE CHANGE MEMORY DEVICE AND PROGRAMMING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce a peak current during programming in a phase change memory device.

SOLUTION: A phase change memory device comprises a plurality of phase change memory cells and a reset pulse generating circuit configured to output a plurality of sequential reset pulses. The sequential reset pulses are output to a plurality of corresponding reset lines, respectively. A plurality of write driver circuits are linked to the corresponding phase change memory cells and corresponding reset lines of the reset pulse generating circuit. A method of programming the phase change memory device using a sequential reset control signal is also provided.

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