发明名称 LITHOGRAPHY APPARATUS AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a lithography apparatus that employs an immersion aligner and is capable of suppressing variations in temperature of a wafer associated with transfer of the wafer in equipment. <P>SOLUTION: The lithography apparatus comprises a resist processing device 1, the immersion aligner 2, a transfer device 3 coupled to the resist processing device 1 and aligner 2 for transferring a wafer 5 between the resist processing device 1 and aligner 2, and a temperature and moisture control unit 4 for controlling the temperature and moisture within the transfer device 3 based on the temperature and moisture within the aligner 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006024715(A) 申请公布日期 2006.01.26
申请号 JP20040201011 申请日期 2004.07.07
申请人 TOSHIBA CORP 发明人 SHIBATA TAKESHI;ITO SHINICHI
分类号 H01L21/027;B65G49/00;G03F7/20;H01L21/677 主分类号 H01L21/027
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