| 摘要 |
PROBLEM TO BE SOLVED: To easily remove a resist pattern on which a surface altered layer is formed. SOLUTION: For example, when an overcoat film 13 made of silicon nitride is dry-etched with the resist pattern 24 for forming a contact hole 15 formed on the overcoat film 13 as a mask to form the contact hole 15, the surface altered layer 24a is formed on the surface of the resist pattern 24. Then, the resist pattern 24 containing the surface altered layer 24a is removed by using a resist-removing liquid with monoethanolamine as a main constituent. In this case, since the surface altered layer 24a does not dissolve into the resist-removing liquid, the surface altered layer 24a remains as a residue to some extent. Therefore, the residue of the surface altered layer is removed by performing megasonic cleaning in hydrogen water. COPYRIGHT: (C)2006,JPO&NCIPI
|
