发明名称 |
AIN SINGLE CRYSTAL AND ITS GROWTH METHOD |
摘要 |
PROBLEM TO BE SOLVED: To grow an AlN single crystal on an AlN seed crystal without generating polycrystallization. SOLUTION: In a method for growing the AlN single crystal in which the AlN single crystal 3 is grown on the AlN seed crystal 2 by a sublimation method, the AlN single crystal 3 is grown while bringing the AlN single crystal 3 into contact with an inner wall 12w of a crystal growth vessel 12 and also so that a crystal growth rate V<SB>E</SB>at the end part of a crystal growth interface 3s of the AlN single crystal 3 becomes smaller than a crystal growth rate V<SB>C</SB>at the center part of the crystal growth interface 3s. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006021964(A) |
申请公布日期 |
2006.01.26 |
申请号 |
JP20040202270 |
申请日期 |
2004.07.08 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;MIYANAGA TOMOMASA |
分类号 |
C30B29/38 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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