发明名称 AIN SINGLE CRYSTAL AND ITS GROWTH METHOD
摘要 PROBLEM TO BE SOLVED: To grow an AlN single crystal on an AlN seed crystal without generating polycrystallization. SOLUTION: In a method for growing the AlN single crystal in which the AlN single crystal 3 is grown on the AlN seed crystal 2 by a sublimation method, the AlN single crystal 3 is grown while bringing the AlN single crystal 3 into contact with an inner wall 12w of a crystal growth vessel 12 and also so that a crystal growth rate V<SB>E</SB>at the end part of a crystal growth interface 3s of the AlN single crystal 3 becomes smaller than a crystal growth rate V<SB>C</SB>at the center part of the crystal growth interface 3s. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006021964(A) 申请公布日期 2006.01.26
申请号 JP20040202270 申请日期 2004.07.08
申请人 SUMITOMO ELECTRIC IND LTD 发明人 FUJIWARA SHINSUKE;MIYANAGA TOMOMASA
分类号 C30B29/38 主分类号 C30B29/38
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