| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor wherein a channel length can be easily shortened as compared with the resolution of a pattern and the quantity of handling current can be increased at low cost as a result. SOLUTION: A gate electrode 5, a gate insulating film 7 covering the gate electrode 5, and a channel layer (semiconductor thin film of a channel part) 11 covering the gate electrode 5 with the gate insulating film 7 in between are stacked on a substrate 3 in this order or in reverse order, and a source electrode 9 and a drain electrode 15 are separately placed on the surface and backsides of the channel layer 11, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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