| 摘要 |
A heat-sink structure for electronic devices and the like The structure (S) comprises an upper layer (1) of a material with high thermal conductivity on which an electronic device (T) or the like is to be fitted, a lower layer (2) also made of a material with high thermal conductivity, and an intermediate layer (3) which is made of a material having a lower thermal conductivity than the upper and lower layers (1, 2). In the region (1b) surrounding the area (1) occupied by the device (T), the intermediate layer (3) has a thickness which decreases as the distance from the device (T) increases and, between the upper layer (1) and the lower layer (2), connection elements (1c; 1d) are provided which can define the distance between the upper and lower layers (1, 2) in a calibrated manner. The connection elements (1c; 1d) are distributed along a closed line which extends around the area occupied by the electronic device (T). |
