发明名称 Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device
摘要 A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.
申请公布号 US2006017013(A1) 申请公布日期 2006.01.26
申请号 US20050172996 申请日期 2005.07.05
申请人 OTA TAKUMI;NAKASUGI TETSURO 发明人 OTA TAKUMI;NAKASUGI TETSURO
分类号 G21G5/00;A61N5/00 主分类号 G21G5/00
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