| 摘要 |
<p>An SIMOX substrate is manufactured by performing heat treatment to a silicon substrate wherein oxygen ions are injected, in a mixed gas atmosphere of argon and oxygen at 1,300-1,350°C. After oxygen ion injection and prior to the heat treatment, preheat treatment is performed to the silicon substrate, in an atmosphere of an inert gas or a reducing gas or a mixed gas at a temperature within a range of 1,000°C to 1,280°C, for 5 minutes to 4 hours. The silicon substrate wherein oxygen ions are injected preferably has a crystal defect density of 1×10<SUP>5</SUP>cm<SUP>-3</SUP> or more, which is of void defect or COP, and a maximum frequency of size distribution of the crystal defect of 0.12µm or less. More preferably, after the preheat treatment, the temperature of the silicon substrate is reduced to 600°C to 1,100°C, in the atmosphere of the inert gas or the reducing gas or a mixed gas of these, and then heat-treated in the mixed gas atmosphere of argon and oxygen.</p> |
