| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method and a plug formation method, with which deposition of a foreign matter to a copper or a failure in shape caused by production of copper sulfide, in plasma etching using sulfur hexafluoride as plasma generation gas on a substrate with copper and silicon present on its front layer. SOLUTION: In plasma etching for the purpose of forming a plug having the end of a copper electrode embedded in a silicon substrate protruding from the surface of the silicon substrate by removing the surface of the substrate by the plasma etching, a mixture gas mainly containing sulfur hexafluoride is used as the plasma generation gas, and plasma etching is done while the surface temperature of the silicon substrate is kept at 65°C or lower. Thus deposition of the copper sulfide produced during the plasma processing process can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
|
