METHOD OF CONTROLLING THE CONDUCTIVITY OF N-TYPE NITRIDE SEMICONDUCTOR LAYER

摘要

The present invention relates to a method of controlling the conductivity of an n-type semiconductor layer which is indispensable in manufacturing a nitride light-emitting device, wherein the n-type nitride layer is formed by alternately depositing an n-type doped In(x)Ga(l-x)N (0<x<1) layer and an undoped GaN layer and the conductivity of the n-type nitride layer is controlled by adjusting the ratios in concentration and thickness between the n-type doped In(x)Ga(l-x)N (0<x<l) layer and the undoped GaN layer.