SEMICONDUCTOR DEVICE, SEMICONDUCTOR LAYER AND ITS PRODUCTION PROCESS

摘要

PROBLEM TO BE SOLVED: To solve the problem that an environment-proof semiconductor device utilizing boron phosphide (BP) and BP based mixed crystal cannot be provided because a process for forming a BP crystal layer having a band gap around 3 eV is not disclosed.

SOLUTION: The semiconductor device comprising a boron phosphide (BP) layer having a band gap of 2.8-3.4 eV under room temperature or a boron phosphide (BP) based mixed crystal layer represented by general formula BαAlβGaγIn1-α-β-γPδAsεN1-δ-ε(0<α≤1, 0≤β<1, 0≤γ<1, 0<α+β+γ≤1, 0<δ≤1, 0≤ε<1, 0<δ+ε≤1) containing that boron phosphide is produced using vapor phase epitaxial growth method.

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