发明名称 Metamorphic buffer on small lattice constant substrates
摘要 A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates).
申请公布号 US2006017063(A1) 申请公布日期 2006.01.26
申请号 US20050078642 申请日期 2005.03.10
申请人 LESTER LUKE F;DAWSON LARRY R;PEASE EDWIN A 发明人 LESTER LUKE F.;DAWSON LARRY R.;PEASE EDWIN A.
分类号 H01L31/109;H01L29/201;H01L29/205;H01L31/0304;H01L31/0352 主分类号 H01L31/109
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