| 摘要 |
A semiconductor device and its manufacturing method are achieved which are capable of mixing a plurality of different crystal orientations in SOI substrate surfaces and controlling increase of leakage current into substrates and increase in power consumption in each area. An SOI substrate is fabricated by bonding two semiconductor wafers together so that the same <110> crystal orientations of those wafers are displaced at a predetermined angle (e.g., 45 degrees) with respect to each other. Part of the SOI substrate surface is then etched to a buried insulating layer, in which part epitaxial growth is conducted. Then, using the SIMOX technique, a buried oxide film is also formed in the area where an epitaxial growth layer is formed, so that the SOI structure is formed in each area.
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