| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which expands the exposure margin in lithography, when forming a connection hole without causing a decline in productivity, and by which a yield is improved and further microfabrication is attained, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device includes an underlayer interconnection 3 provided on a substrate, a second interlayer dielectric 5 covering the underlayer interconnection 3, a via 7 in which the inside of the connection hole 5a provided at the second interlayer dielectric 5 is embedded with a conductive material, in such a state that it reaches the underlayer interconnection 3, and an upper layer interconnect 9 with a pattern formed on the second interlayer dielectric 5, in such a state as it is connected with the via 7. The connection hole 5 has an opening shape which is longer in an extended direction of the upper layer interconnect 9, and the hole is formed into a tapered shape, in which an opening diameter becomes smaller toward the side of the underlayer interconnection 3 from the side of the upper layer interconnect 9 at a continuous angle of inclination θ. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
