| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor devices having a dual-gate dielectric structure by radical oxidation. <P>SOLUTION: A semiconductor device manufacturing method includes a step of forming an insulating film on a semiconductor substrate, a step of forming a nitride film on the insulating film; a step of selectively etching the nitride film of the predetermined region, a step of performing radical oxidation, in such a manner that an oxide film is formed on the entire structure including the etched nitride film, a step of forming a gate conductive film on the oxide film, and a step of selectively etching the gate conductive film, the oxide film, the nitride film and the insulating film. The semiconductor device has a constitution for forming a first gate dielectric structure by laminating the insulating film and the oxide film in the predetermined region, and forming a second gate dielectric structure by laminating the insulating film, the nitride film, and the oxide film in the region except for the predetermined region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
