发明名称 |
High rate etching using high pressure F2 plasma with argon dilution |
摘要 |
The present invention provides for the use of F2 in the process of deposition chamber cleaning which is especially effective if operated under high pressure conditions. In addition, the present invention provides for the use of F2 under high pressure to perform substrate etching or wafer thinning procedures at a high etch rate.
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申请公布号 |
US2006016459(A1) |
申请公布日期 |
2006.01.26 |
申请号 |
US20050122728 |
申请日期 |
2005.05.05 |
申请人 |
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发明人 |
MCFARLANE GRAHAM;HOGLE RICHARD |
分类号 |
B08B6/00;B44C1/22;C23C16/44;C23F1/00;H01J37/32;H01L21/3065;H01L21/31 |
主分类号 |
B08B6/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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