| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stencil mask that is provided with a substrate and a mask matrix supported by the substrate and having a through hole pattern through which a charged particle beam is passed, can be reduced easily in thickness, can be adjusted easily in stress and, at the same time, is ideal for obtaining a stencil mask for electron beam exposure having excellent electron beam irradiation resistance, can be manufactured with a high yield through a simple process, and is high in the positional accuracy of its pattern; and to provide a method of manufacturing the mask and a method of transferring its pattern. <P>SOLUTION: The stencil mask comprises a substrate; a mask matrix supported by the substrate; and a mask matrix foundation layer composed of a carbon film, amorphous carbon film, diamond film, or diamond-like carbon film at, at least, part of the substrate side of the mask matrix. When the mask matrix foundation layer is composed of the diamond film or diamond-like carbon film, the foundation layer is doped with one kind of element selected from among a group composed of boron, sulfur, nitrogen, phosphor, and silicon as an impurity. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
