| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device containing a diode structure which has an increased surge voltage by deconcentrating a surge current. SOLUTION: The semiconductor device comprises a p well 12 formed by diffusing a dopant in a p<SP>+</SP>-type semiconductor substrate 10; a peripheral p<SP>+</SP>-type diffusion layer 14 formed by diffusing the dopant in a higher concentration than in the p well along the periphery of the p well 12; p<SP>+</SP>-type diffusion layers 16 which are arranged at prescribed intervals in the crosswise direction while being shifted in the lengthwise direction in a region surrounded by the peripheral p<SP>+</SP>-type diffusion layer 14, and which are formed by diffusing the dopant in a higher concentration than in the p well 12; and an n<SP>+</SP>-type diffusion layer 18 formed continuously by diffusing a dopant in a high concentration between the peripheral p<SP>+</SP>-type diffusion layer 14 and the p<SP>+</SP>-type diffusion layers 16 or between the adjacent p<SP>+</SP>-type diffusion layers. COPYRIGHT: (C)2006,JPO&NCIPI
|
