PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress diffusion of metal employed in barrier metal into a porous low dielectric constant (p-lowk) film being formed porously. SOLUTION: The process for fabricating a semiconductor device comprises a step for forming a p-lowk film on a substrate (S102); a step for supplying Ta[N(C2H5)2]5which causes attraction of a molecule (Ta-R1) having a hole on the surface side of the p-lowk film larger than the opening size at a position coupled with the hole on the inner side of the p-lowk film to the surface of the p-lowk film (S106); a step for supplying NH3reacting on the molecule (Ta-R1) and forming a TaN film (S110); a step for supplying TaCl5which causes attraction of a molecule (Ta-R2) smaller than the opening size (S114); and a step for supplying NH3reacting on the molecule (Ta-R2) and forming a TaN film furthermore (S120). COPYRIGHT: (C)2006,JPO&NCIPI