| 摘要 |
<p>The semiconductor device has a collector electrode, a p+ collector region (22) formed on the collector electrode, an n- drift region (24) formed on the collector region, a p- body region (26) formed on the drift region, and a plurality of n+ emitter regions (28) formed within the body region. The emitter regions are connected to an emitter electrode. A plurality of trench gate electrodes (32) is formed within the body region. Each trench gate electrode opposes, via an insulating layer (34), a portion of the body region separating the drift region and the emitter region. The body region is divided into a plurality of body sections, and the body sections are classified into two groups. One group (26a) has the emitter region within the body section, and the other group (26b) has no emitter region within the body section. A plurality of first trenches (35a, 35b, 35c) is formed within the body section having no emitter region.</p> |
