METHOD FOR DESIGNING A SEMICONDUCTOR LASER WITH INTRACAVITY REFLECTING FEATURES, SEMICONDUCTOR LASER AND METHOD OF FABRICATION THEREOF

摘要

A Fabry-Pérot (FP) laser device (1) has an n-type substrate (2), an active region (3), a p-type cladding (4), an insulator (5), and a contact (6). The cladding (4) comprises a ridge (7) having a number of slots (8). The slots (8) cause a partial longitudinal reflection of the light. The precise locations of the slots are chosen to accurately and predictably achieve a particular selected mode or modes in the output light. A method to design a slot pattern both preferentially selects a particular Fabry-Pérot mode as the peak emission wavelength and also suppresses an arbitrary number of neighbouring Fabry-Pérot modes. The method selects a set of Fabry-Pérot modes in preference to other Fabry-Pérot modes within the cavity. In this way the method addresses the important problems for semiconductor lasers of predetermination of the peak lasing wavelength and also stability of the peak lasing mode with changes in temperature. The method also allows for the fabrication of multimode devices with increased functionality both as individual devices and as component parts of more complex multi-section or multi-element devices.