Method for fabricating field oxide isolation of semiconductor devices,申请号KR20030077735-传众专利搜索

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发明名称	Method for fabricating field oxide isolation of semiconductor devices
摘要
申请公布号	KR100546752(B1)	申请公布日期	2006.01.26
申请号	KR20030077735	申请日期	2003.11.04
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
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