| 摘要 |
A method to provide an improved production yield of electronic devices. A thin film device 41 is manufactured by the following method. Semiconductor elements 11 are formed on the substrate 10 . Then, a protective film is adhered onto the upper portions of the semiconductor elements 11 using an adhesive agent. Then, the substrate 10 is removed along the thickness direction from the surface thereof opposite to the surface having the semiconductor elements 11 provided thereon. Subsequently, a film 16 is adhered onto the surface of the removal-processed substrate 10 . Subsequently, the protective film is removed. The obtained thin film device 41 is heat-treated.
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